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Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied. However, strain-induced PTs in Si were never studied in situ. Here, we revealed in situ various important plastic strain-induced PT phenomena. A correlation between the particle size's direct and inverse Hall-Petch effect on yield strength and pressure for strain-induced PT is found. For 100 nm particles, strain-induced PT Si-I³Si-II initiates at 0.3 GPa versus 16.2 GPa under hydrostatic conditions; Si-I³Si-III PT starts at 0.6 GPa and does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions is ~5-7 GPa higher than in Si-I. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II³Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction. 

Pressure-induced phase transformations (PTs) between numerous phases of Si, the most important electronic material, have been studied for decades. This is not the case for plastic strain-induced PTs. Here, we revealed in-situ various unexpected plastic strain-induced PT phenomena. Thus, for 100 nm Si, strain-induced PT Si-I to Si-II (and Si-I to Si-III) initiates at 0.4 GPa (0.6 GPa) versus 16.2 GPa (∞, since it does not occur) under hydrostatic conditions; for 30 nm Si, it is 6.1 GPa versus ∞. The predicted theoretical correlation between the direct and inverse Hall-Petch effect of the grain size on the yield strength and the minimum pressure for strain-induced PT is confirmed for the appearance of Si-II. Retaining Si-II at ambient pressure and obtaining reverse Si-II to Si-I PT are achieved, demonstrating the possibilities of manipulating different synthetic paths. 

Cerium oxide (ceria, CeO2) is frequently used as a standard in applications such as synchrotron and x-ray free electron lasers for calibrating x-ray wavelengths and offers the potential for understanding the high pressure properties and deformation mechanisms in a wide range of similar face centered cubic (fcc) materials. In this study, the pressure dependence of the strength of ceria was investigated up to 38 GPa using angle dispersive x-ray diffraction in a radial geometry in a diamond anvil cell. In this experiment, the difference in the stress along the axis of compression and perpendicular to the direction of compression can be determined, giving a quantity known as the differential stress. It was found that the differential stress (t), a measure of the lower bound for yield strength, initially increases rapidly from 0.35 ± 0.06 GPa to 2.2 ± 0.4 GPa at pressures of 1.8 and 3.8 GPa, respectively. Above 4 GPa, t increases more slowly to 13.8 ± 2.6 GPa at a pressure of 38 GPa. The changes in the preferred orientation (texture) of CeO2 with pressure were also measured, allowing for the determination of active deformation mechanisms using an elasto-viscoplastic self-consistent model (EVPSC). It was found that as pressure increased, the [001] direction had a slight preferred orientation along the axis of compression. Our EVPSC model of experimental fiber (cylindrically symmetric) textures and lattice strains were most consistent with dominant slip activity along {111}⟨11¯0⟩. 

Selective autophagy is a conserved subcellular process that maintains the health of eukaryotic cells by targeting damaged or toxic cytoplasmic components to the vacuole/lysosome for degradation. A key player in the initiation of selective autophagy in S. Cerevisiae (baker’s yeast) is a large adapter protein called Atg11. Atg11 has multiple predicted coiled-coil domains and intrinsically disordered regions, is known to dimerize, and binds and organizes other essential components of the autophagosome formation machinery, including Atg1 and Atg9. We performed systematic directed mutagenesis on the coiled-coil 2 domain of Atg11 in order to map which residues were required for its structure and function. Using yeast-2-hybrid and coimmunoprecipitation, we found only three residues to be critical: I562, Y565, and I569. Mutation of any of these, but especially Y565, could interfere with Atg11 dimerization and block its interaction with Atg1 and Atg9, thereby inactivating selective autophagy.